Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 5V @ 100μA
- Current Continuous Drain Id25
- 6A Tc
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation Max
- 110W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 950m Ω @ 3A, 10V
- Turn On Delay Time
- 12 ns
- Vgs Max
- ±30V
- Gate Charge Qg Max Vgs
- 16.5nC @ 10V
- Fabrika Tedarik Süresi
- 17 Weeks
- Radyasyon Dayanımı
- No
- Drain Currentmax Abs Id
- 6A
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Jedec95 Code
- TO-220AB
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Montaj
- Through Hole
- Yükseklik
- 15.75mm
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pulsed Drain Currentmax Idm
- 24A
- Terminal Kaplaması
- Tin (Sn)
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 450pF @ 100V
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 32 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Seri
- SuperMESH5™
- Genişlik
- 4.6mm
- Power Dissipation
- 110W
- Rise Time
- 14ns
- Case Connection
- DRAIN
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