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Support
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Specifications
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Temel Parça No
- STP80P
- Power Dissipation
- 300W
- Rise Time
- 190ns
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 16V
- Kılıf / Paket
- TO-220-3
- Continuous Drain Current Id
- 80A
- Fall Time Typ
- 80 ns
- Drain To Source Breakdown Voltage
- -55V
- Akım Değeri
- -80A
- Direnç
- 18mOhm
- Seri
- STripFET™ II
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Genişlik
- 4.6mm
- Terminal Kaplaması
- Tin (Sn)
- Input Capacitance Ciss Max Vds
- 5500pF @ 25V
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 165 ns
- Montaj
- Through Hole
- Yükseklik
- 9.15mm
- Voltage Rated Dc
- -55V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Gate Charge Qg Max Vgs
- 258nC @ 10V
- Radyasyon Dayanımı
- No
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Drain To Source Voltage Vdss
- 55V
- Threshold Voltage
- -3V
- ECCN Kodu
- EAR99
- Fet Type
- P-Channel
- JESD-609 Kodu
- e3
- Jedec95 Code
- TO-220AB
- Power Dissipation Max
- 300W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
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