Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 4.535924g
- Current Continuous Drain Id25
- 80A Tc
- Reach Svhc
- No SVHC
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 4V @ 250μA
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 8m Ω @ 40A, 10V
- Turn On Delay Time
- 20 ns
- Vgs Max
- ±20V
- Power Dissipation Max
- 300W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Threshold Voltage
- 3V
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Jedec95 Code
- TO-220AB
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Gate Charge Qg Max Vgs
- 155nC @ 10V
- Radyasyon Dayanımı
- No
- Parça Durumu
- Not For New Designs
- Kurşunsuz
- Lead Free
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Yükseklik
- 15.75mm
- Voltage Rated Dc
- 55V
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 3850pF @ 25V
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 75 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Seri
- STripFET™
- Genişlik
- 4.6mm
- Contact Plating
- Tin
- Fall Time Typ
- 25 ns
- Drain To Source Breakdown Voltage
- 55V
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