STP80NE06-10

Specifications

Fall Time Typ

75 ns

Drain To Source Breakdown Voltage

60V

Akım Değeri

80A

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e0

Jedec95 Code

TO-220AB

Gate Charge Qg Max Vgs

140nC @ 10V

Power Dissipation

150W

Rise Time

150ns

Kurşunsuz

Contains Lead

Parça Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

320A

Pin Sayısı

3

Temel Parça No

STP80N

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Number Of Elements

1

Voltage Rated Dc

60V

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

80A Tc

Input Capacitance Ciss Max Vds

10000pF @ 25V

RoHS Durumu

Non-RoHS Compliant

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Qualification Status

Not Qualified

Vgsth Max Id

4V @ 250μA

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Çalışma Sıcaklığı

175°C TJ

Rds On Max Id Vgs

10m Ω @ 40A, 10V

Avalanche Energy Rating Eas

250 mJ