STP80N70F4

Specifications

Nem Hassasiyeti (MSL)

Not Applicable

Power Dissipation Max

150W Tc

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Avalanche Energy Rating Eas

185 mJ

Rds On Max Id Vgs

9.8m Ω @ 40A, 10V

Seri

DeepGATE™, STripFET™

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4V @ 250μA

Terminal Kaplaması

Matte Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

85A Tc

Input Capacitance Ciss Max Vds

5600pF @ 25V

Ds Breakdown Voltagemin

68V

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Temel Parça No

STP80N

Pin Sayısı

3

Pulsed Drain Currentmax Idm

340A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

68V

Kılıf / Paket

TO-220-3

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

85A

Parça Durumu

Obsolete

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

90nC @ 10V

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Yüzey Montaj

NO

Drainsource On Resistancemax

0.0098Ohm