Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 104nC @ 10V
- Power Dissipation
- 190W
- Rise Time
- 31ns
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Radyasyon Dayanımı
- No
- Continuous Drain Current Id
- 61A
- Gate To Source Voltage Vgs
- 25V
- Kılıf / Paket
- TO-220-3
- Operating Mode
- ENHANCEMENT MODE
- Fall Time Typ
- 176 ns
- Threshold Voltage
- 4V
- Drain To Source Breakdown Voltage
- 200V
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-220AB
- JESD-609 Kodu
- e3
- Direnç
- 23MOhm
- Gerilim
- 200V
- Number Of Elements
- 1
- Montaj
- Through Hole
- Akım
- 61A
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Temel Parça No
- STP80N
- Terminal Kaplaması
- Tin (Sn)
- Vgsth Max Id
- 5V @ 250μA
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Current Continuous Drain Id25
- 61A Tc
- Input Capacitance Ciss Max Vds
- 4329pF @ 50V
- Turn Off Delay Time
- 131 ns
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 190W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
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