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Support
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Specifications
- Power Dissipation
- 125W
- Rise Time
- 12ns
- Gate To Source Voltage Vgs
- 30V
- Kılıf / Paket
- TO-220-3
- Continuous Drain Current Id
- 5.2A
- Operating Mode
- ENHANCEMENT MODE
- Fall Time Typ
- 20 ns
- Akım Değeri
- 5.2A
- Drain To Source Breakdown Voltage
- 800V
- Number Of Elements
- 1
- Additional Feature
- AVALANCHE RATED
- Pin Sayısı
- 3
- Temel Parça No
- STP7N
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 1138pF @ 25V
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 45 ns
- Seri
- SuperMESH™
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Genişlik
- 4.6mm
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 56nC @ 10V
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 3.75V
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-220AB
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- JESD-609 Kodu
- e3
- Yükseklik
- 9.15mm
- Montaj
- Through Hole
- Voltage Rated Dc
- 800V
- Pulsed Drain Currentmax Idm
- 20.8A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4.5V @ 100μA
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