STP7N60M2

Specifications

Rds On Max Id Vgs

950m Ω @ 2.5A, 10V

Transistor Application

SWITCHING

Turn On Delay Time

7.6 ns

Vgs Max

±25V

Ambalaj

Tube

Element Configuration

Single

Power Dissipation Max

60W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

5A Tc

Vgsth Max Id

4V @ 250μA

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

20A

Montaj

Through Hole

Yükseklik

15.75mm

Threshold Voltage

3V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Gate Charge Qg Max Vgs

8.8nC @ 10V

Fabrika Tedarik Süresi

16 Weeks

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

5A

Parça Durumu

Active

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

MDmesh™ II Plus

Avalanche Energy Rating Eas

99 mJ

Genişlik

4.6mm

Montaj Tipi

Through Hole

Turn Off Delay Time

19.3 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

271pF @ 100V

Pin Sayısı

3

Temel Parça No

STP7N