Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 50nC @ 10V
- Power Dissipation
- 110W
- Rise Time
- 248ns
- Continuous Drain Current Id
- 80A
- Kılıf / Paket
- TO-220-3
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
- Drain To Source Breakdown Voltage
- 33V
- Fall Time Typ
- 85 ns
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Jedec95 Code
- TO-220AB
- JESD-609 Kodu
- e3
- Direnç
- 11MOhm
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Yükseklik
- 15.75mm
- Number Of Elements
- 1
- Montaj
- Through Hole
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Temel Parça No
- STP75N
- Terminal Kaplaması
- Tin (Sn)
- Vgsth Max Id
- 4V @ 250μA
- Turn Off Delay Time
- 53 ns
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Through Hole
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Current Continuous Drain Id25
- 80A Tc
- Input Capacitance Ciss Max Vds
- 1860pF @ 25V
- Ambalaj
- Tube
- Power Dissipation Max
- 110W Tc
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 11m Ω @ 40A, 10V
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