Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 4V @ 250μA
- Current Continuous Drain Id25
- 75A Tc
- Reach Svhc
- No SVHC
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation Max
- 190W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 34m Ω @ 37A, 10V
- Vgs Max
- ±20V
- Turn On Delay Time
- 53 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 84nC @ 10V
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 3V
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-220AB
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- JESD-609 Kodu
- e3
- Yükseklik
- 15.75mm
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 3260pF @ 25V
- Pin Sayısı
- 3
- Turn Off Delay Time
- 75 ns
- Montaj Tipi
- Through Hole
- Seri
- STripFET™
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Genişlik
- 4.6mm
- Avalanche Energy Rating Eas
- 205 mJ
- Power Dissipation
- 190W
- Rise Time
- 33ns
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