Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 20 ns
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 1350pF @ 25V
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Seri
- SuperMESH™
- Genişlik
- 4.6mm
- Case Connection
- ISOLATED
- Power Dissipation
- 30W
- Rise Time
- 45ns
- Gate To Source Voltage Vgs
- 30V
- Continuous Drain Current Id
- 5.8A
- Kılıf / Paket
- TO-220-3 Full Pack
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 900V
- Fall Time Typ
- 20 ns
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Additional Feature
- AVALANCHE RATED, HIGH VOLTAGE
- Temel Parça No
- STP6N
- Vgsth Max Id
- 4.5V @ 100μA
- Weight
- 4.535924g
- Reach Svhc
- No SVHC
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 5.8A Tc
- Ambalaj
- Tube
- Element Configuration
- Single
- Power Dissipation Max
- 30W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 2 Ω @ 2.9A, 10V
- Transistor Application
- SWITCHING
- Vgs Max
- ±30V
- Turn On Delay Time
- 17 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 60.5nC @ 10V
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
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