Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Power Dissipation Max
- 150W Tc
- Element Configuration
- Single
- Turn On Delay Time
- 30 ns
- Vgs Max
- ±30V
- Rds On Max Id Vgs
- 2.4 Ω @ 2.5A, 10V
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 5V @ 100μA
- Reach Svhc
- No SVHC
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 6A Tc
- Max Junction Temperature Tj
- 150°C
- Montaj
- Through Hole
- Yükseklik
- 19.68mm
- Number Of Channels
- 1
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pulsed Drain Currentmax Idm
- 20A
- Drain To Source Voltage Vdss
- 1200V
- Radyasyon Dayanımı
- No
- Drain Currentmax Abs Id
- 6A
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Gate Charge Qg Max Vgs
- 34nC @ 10V
- JESD-609 Kodu
- e3
- Jedec95 Code
- TO-220AB
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- Threshold Voltage
- 4V
- Contact Plating
- Tin
- Genişlik
- 4.6mm
- Seri
- SuperMESH3™
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 58 ns
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Input Capacitance Ciss Max Vds
- 1050pF @ 100V
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