Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Through Hole
- Power Dissipation
- 110W
- Vgsth Max Id
- 1V @ 250μA
- Turn On Delay Time
- 35 ns
- Uzunluk
- 10.4mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Genişlik
- 4.6mm
- Weight
- 9.071847g
- Number Of Elements
- 1
- Fall Time Typ
- 30 ns
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Fet Type
- N-Channel
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 15V
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Vgs Max
- ±15V
- Kılıf / Paket
- TO-220-3
- Yükseklik
- 9.15mm
- Akım Değeri
- 60A
- Additional Feature
- LOW THRESHOLD, AVALANCHE RATED
- Power Dissipation Max
- 110W Tc
- Çalışma Sıcaklığı
- -65°C~175°C TJ
- Direnç
- 14mOhm
- Current Continuous Drain Id25
- 60A Tc
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 60V
- Element Configuration
- Single
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 60A
- Pulsed Drain Currentmax Idm
- 240A
- Input Capacitance Ciss Max Vds
- 2000pF @ 25V
- Voltage Rated Dc
- 60V
- Rise Time
- 220ns
- Jedec95 Code
- TO-220AB
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