STP60N55F3

Specifications

Direnç

8.5MOhm

Çalışma Sıcaklığı

-55°C~175°C TJ

Turn On Delay Time

20 ns

Vgsth Max Id

4V @ 250μA

Montaj

Through Hole

Power Dissipation

110W

Drain To Source Breakdown Voltage

55V

Genişlik

4.6mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

80A

Case Connection

DRAIN

Fall Time Typ

11.5 ns

Element Configuration

Single

Pin Sayısı

3

Rise Time

50ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

2200pF @ 25V

Radyasyon Dayanımı

No

Pin Sayısı

3

Seri

STripFET™ III

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

45nC @ 10V

Fet Type

N-Channel

Temel Parça No

STP60N

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Turn Off Delay Time

35 ns

JESD-609 Kodu

e3

Ambalaj

Tube

Drive Voltage Max Rds On Min Rds On

10V