STP60N3LH5

Specifications

Direnç

8.4MOhm

Power Dissipation

60W

Montaj

Through Hole

Vgsth Max Id

3V @ 250μA

Turn On Delay Time

6 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

48A Tc

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Continuous Drain Current Id

48A

Case Connection

DRAIN

Fall Time Typ

4.2 ns

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

33ns

Pin Sayısı

3

Input Capacitance Ciss Max Vds

1350pF @ 25V

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

8.8nC @ 5V

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

22V

Seri

STripFET™ V

Terminal Sayısı

3

Temel Parça No

STP60N

Fet Type

N-Channel

Turn Off Delay Time

19 ns

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

JESD-609 Kodu

e3

Additional Feature

ULTRA-LOW RESISTANCE

Kurşunsuz

Lead Free