STP5NK52ZD

Specifications

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Pin Sayısı

3

Seri

SuperMESH™

Gate To Source Voltage Vgs

30V

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

16.9nC @ 10V

Fet Type

N-Channel

Temel Parça No

STP5N

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

Vgs Max

±30V

Turn Off Delay Time

23.1 ns

JESD-609 Kodu

e3

Ambalaj

Tube

Power Dissipation Max

25W Tc

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

1.5 Ω @ 2.2A, 10V

Additional Feature

AVALANCHE RATED

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Parça Durumu

Not For New Designs

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

11.4 ns

Vgsth Max Id

4.5V @ 50μA

Montaj

Through Hole

Power Dissipation

70W

Drain To Source Breakdown Voltage

520V

Genişlik

4.6mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

4.4A Tc

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

4.4A

Fall Time Typ

15 ns

Element Configuration

Single