STP5N60M2

Specifications

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Terminal Sayısı

3

Temel Parça No

STP5N

Avalanche Energy Rating Eas

80 mJ

Fabrika Tedarik Süresi

16 Weeks

Fet Type

N-Channel

Gate Charge Qg Max Vgs

4.5nC @ 10V

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ II Plus

Pin Sayısı

3

Ambalaj

Tube

Turn Off Delay Time

70 ns

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

1.4 Ω @ 1.85A, 10V

Power Dissipation Max

45W Tc

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

11.8 ns

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

3.7A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

600V

Genişlik

4.6mm

Element Configuration

Single

Weight

329.988449mg

Transistor Element Material

SILICON

Continuous Drain Current Id

3.7A

Case Connection

DRAIN

Number Of Elements

1