STP57N65M5

Specifications

Direnç

63MOhm

Power Dissipation

250W

Montaj

Through Hole

Turn On Delay Time

73 ns

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

650V

Genişlik

4.6mm

Current Continuous Drain Id25

42A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Transistor Element Material

SILICON

Continuous Drain Current Id

42A

Case Connection

DRAIN

Fall Time Typ

19 ns

Number Of Elements

1

Element Configuration

Single

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

15ns

Input Capacitance Ciss Max Vds

4200pF @ 100V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

98nC @ 10V

Seri

MDmesh™ V

Gate To Source Voltage Vgs

25V

Pin Sayısı

3

Terminal Sayısı

3

Temel Parça No

STP57N

Fabrika Tedarik Süresi

17 Weeks

Avalanche Energy Rating Eas

960 mJ

Fet Type

N-Channel

Turn Off Delay Time

12 ns

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

Kurşunsuz

Lead Free