Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Ambalaj
- Tube
- Kılıf / Paket
- TO-220-3 Full Pack
- Vgs Max
- ±30V
- Yükseklik
- 9.3mm
- Power Dissipation Max
- 25W Tc
- Additional Feature
- AVALANCHE RATED
- Drain Currentmax Abs Id
- 3A
- Turn On Delay Time
- 13 ns
- Vgsth Max Id
- 4.5V @ 50μA
- Montaj
- Through Hole
- Power Dissipation
- 25W
- Uzunluk
- 10.4mm
- Genişlik
- 4.6mm
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Fall Time Typ
- 32 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 12 Weeks
- Avalanche Energy Rating Eas
- 190 mJ
- Temel Parça No
- STP4N
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Seri
- SuperMESH™
- Gate Charge Qg Max Vgs
- 22.5nC @ 10V
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 35 ns
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 3.5 Ω @ 1.5A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Direnç
- 3.5Ohm
- RoHS Durumu
- ROHS3 Compliant
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