Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Max
- ±30V
- Kılıf / Paket
- TO-220-3 Full Pack
- Ambalaj
- Tube
- Terminal
- Through Hole
- Reach Svhc
- No SVHC
- Power Dissipation Max
- 25W Tc
- Yükseklik
- 9.3mm
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Fet Type
- N-Channel
- Number Of Elements
- 1
- Fall Time Typ
- 16.5 ns
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Contact Plating
- Tin
- Montaj
- Through Hole
- Power Dissipation
- 25W
- Drain Currentmax Abs Id
- 4A
- Vgsth Max Id
- 4.5V @ 50μA
- Turn On Delay Time
- 12 ns
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Genişlik
- 4.6mm
- Uzunluk
- 10.4mm
- Turn Off Delay Time
- 29 ns
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 2 Ω @ 2A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Dual Supply Voltage
- 600V
- Gate Charge Qg Max Vgs
- 26nC @ 10V
- Pin Sayısı
- 3
- Seri
- SuperMESH™
- Temel Parça No
- STP4N
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 3
- Continuous Drain Current Id
- 4A
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