STP4N52K3

Specifications

Continuous Drain Current Id

2.5A

Case Connection

ISOLATED

Input Capacitance Ciss Max Vds

334pF @ 100V

Jedec95 Code

TO-220AB

Rise Time

7ns

Pin Sayısı

3

Threshold Voltage

3.75V

Çalışma Sıcaklığı

150°C TJ

Direnç

2.6Ohm

Current Continuous Drain Id25

2.5A Tc

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

525V

JESD-609 Kodu

e3

Turn Off Delay Time

21 ns

Parça Durumu

Active

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Rds On Max Id Vgs

2.6 Ω @ 1.25A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Temel Parça No

STP4N

Gate Charge Qg Max Vgs

11nC @ 10V

Seri

SuperMESH3™

Pin Sayısı

3

Transistor Element Material

SILICON

Fall Time Typ

14 ns

Number Of Elements

1

Contact Plating

Tin

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

20W

Montaj

Through Hole

Vgsth Max Id

4.5V @ 50μA

Turn On Delay Time

8 ns

Uzunluk

10.4mm

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

ECCN Kodu

EAR99

Genişlik

4.6mm

Ambalaj

Tube