Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Genişlik
- 4.6mm
- Uzunluk
- 10.4mm
- Power Dissipation
- 208W
- Montaj
- Through Hole
- Vgsth Max Id
- 5V @ 250μA
- Turn On Delay Time
- 79.5 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Radyasyon Dayanımı
- No
- Additional Feature
- ULTRA LOW RESISTANCE
- Power Dissipation Max
- 210W Tc
- Yükseklik
- 15.75mm
- Vgs Max
- ±25V
- Kılıf / Paket
- TO-220-3
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 650V
- Current Continuous Drain Id25
- 35A Tc
- RoHS Durumu
- ROHS3 Compliant
- Direnç
- 78MOhm
- Nominal Vgs
- 4 V
- Çalışma Sıcaklığı
- 150°C TJ
- Jedec95 Code
- TO-220AB
- Threshold Voltage
- 4V
- Input Capacitance Ciss Max Vds
- 3375pF @ 100V
- Pulsed Drain Currentmax Idm
- 140A
- Continuous Drain Current Id
- 35A
- Case Connection
- DRAIN
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 91nC @ 10V
- Seri
- MDmesh™ V
- Pin Sayısı
- 3
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