Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 13 ns
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Uzunluk
- 10.4mm
- Genişlik
- 4.6mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Turn On Delay Time
- 61 ns
- Vgsth Max Id
- 5V @ 250μA
- Power Dissipation
- 190W
- Montaj
- Through Hole
- Yükseklik
- 9.15mm
- Power Dissipation Max
- 190W Tc
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±25V
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 25V
- Terminal Kaplaması
- Tin (Sn)
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Input Capacitance Ciss Max Vds
- 4650pF @ 100V
- Pin Sayısı
- 3
- Threshold Voltage
- 4V
- Jedec95 Code
- TO-220AB
- Rise Time
- 24ns
- Element Configuration
- Single
- Continuous Drain Current Id
- 33A
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 33A Tc
- Drain To Source Breakdown Voltage
- 650V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- 150°C TJ
- Direnç
- 79mOhm
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 79m Ω @ 16.5A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
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