STP40N60M2

Specifications

Drain To Source Breakdown Voltage

600V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

34A Tc

Max Junction Temperature Tj

150°C

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

20.5 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

250W

Montaj

Through Hole

Threshold Voltage

2V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Rise Time

13.5ns

Drainsource On Resistancemax

0.088Ohm

Number Of Channels

1

Input Capacitance Ciss Max Vds

2500pF @ 100V

Transistor Element Material

SILICON

Fall Time Typ

11 ns

Case Connection

DRAIN

Continuous Drain Current Id

34A

Number Of Elements

1

Weight

329.988449mg

Element Configuration

Single

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ II Plus

Gate Charge Qg Max Vgs

57nC @ 10V

Fet Type

N-Channel

Terminal Sayısı

3

Temel Parça No

STP40N

Avalanche Energy Rating Eas

500 mJ

Fabrika Tedarik Süresi

16 Weeks

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Power Dissipation Max

250W Tc

Rds On Max Id Vgs

88m Ω @ 17A, 10V

Drive Voltage Max Rds On Min Rds On

10V