STP3N80K5

Specifications

Rise Time

7.5ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

Input Capacitance Ciss Max Vds

130pF @ 100V

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

2.5A

Case Connection

DRAIN

Fall Time Typ

25 ns

Ds Breakdown Voltagemin

800V

Weight

329.988449mg

Element Configuration

Single

Drain To Source Voltage Vdss

800V

Genişlik

4.6mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

2.5A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

5V @ 100μA

Turn On Delay Time

8.5 ns

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

3.5 Ω @ 1A, 10V

Power Dissipation Max

60W Tc

Kurşunsuz

Lead Free

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Parça Durumu

Active

Kılıf / Paket

TO-220-3

Turn Off Delay Time

20.5 ns

Ambalaj

Tube

Pin Sayısı

3

Seri

SuperMESH5™

Gate To Source Voltage Vgs

30V

Gate Charge Qg Max Vgs

9.5nC @ 10V

Fet Type

N-Channel