STP38N65M5

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jedec95 Code

TO-220AB

Rise Time

9ns

Input Capacitance Ciss Max Vds

3000pF @ 100V

Fall Time Typ

9 ns

Case Connection

ISOLATED

Continuous Drain Current Id

30A

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Genişlik

4.6mm

Drain To Source Breakdown Voltage

650V

Current Continuous Drain Id25

30A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Direnç

95MOhm

Power Dissipation

190W

Montaj

Through Hole

Turn On Delay Time

66 ns

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz

Lead Free

Power Dissipation Max

190W Tc

Rds On Max Id Vgs

95m Ω @ 15A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Montaj Tipi

Through Hole

Yükseklik

15.75mm

Turn Off Delay Time

66 ns

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

Gate Charge Qg Max Vgs

71nC @ 10V

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ V

Pin Sayısı

3

Terminal Sayısı

3