STP36N55M5

Specifications

Ambalaj

Tube

Turn Off Delay Time

56 ns

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Rds On Max Id Vgs

80m Ω @ 16.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

190W Tc

Radyasyon Dayanımı

No

Terminal Sayısı

3

Fabrika Tedarik Süresi

17 Weeks

Temel Parça No

STP36N

Fet Type

N-Channel

Gate Charge Qg Max Vgs

62nC @ 10V

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ V

Pin Sayısı

3

Element Configuration

Single

Transistor Element Material

SILICON

Continuous Drain Current Id

33A

Case Connection

DRAIN

Number Of Elements

1

Input Capacitance Ciss Max Vds

2670pF @ 100V

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.08Ohm

Power Dissipation

190W

Montaj

Through Hole

Turn On Delay Time

56 ns

Vgsth Max Id

5V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Current Continuous Drain Id25

33A Tc

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING