Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 20V
- Terminal Kaplaması
- Matte Tin (Sn)
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- Yükseklik
- 9.15mm
- Power Dissipation Max
- 115W Tc
- Akım Değeri
- 40A
- Turn On Delay Time
- 17 ns
- Vgsth Max Id
- 4V @ 250μA
- Power Dissipation
- 115W
- Montaj
- Through Hole
- Uzunluk
- 10.4mm
- Genişlik
- 4.6mm
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Weight
- 4.535924g
- Transistor Element Material
- SILICON
- Fall Time Typ
- 15 ns
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Temel Parça No
- STP35N
- Seri
- STripFET™ II
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 55nC @ 10V
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 60 ns
- Montaj Tipi
- Through Hole
- Parça Durumu
- Not For New Designs
- Rds On Max Id Vgs
- 35m Ω @ 17.5A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Direnç
- 35mOhm
- RoHS Durumu
- ROHS3 Compliant
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