STP33N60DM2

Specifications

Ds Breakdown Voltagemin

600V

Number Of Elements

1

Case Connection

DRAIN

Continuous Drain Current Id

24A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1870pF @ 100V

Pulsed Drain Currentmax Idm

96A

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Threshold Voltage

4V

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

5V @ 250μA

Current Continuous Drain Id25

24A Tc

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

600V

Ambalaj

Tube

Reach Svhc

No SVHC

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

130m Ω @ 12A, 10V

Power Dissipation Max

190W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

17 Weeks

Avalanche Energy Rating Eas

570 mJ

Temel Parça No

STP33N

Terminal Sayısı

3

Fet Type

N-Channel

Gate Charge Qg Max Vgs

43nC @ 10V

Pin Sayısı

3