STP2NK60Z

Specifications

Radyasyon Dayanımı

No

Seri

SuperMESH™

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

10nC @ 10V

Fet Type

N-Channel

Terminal Sayısı

3

Avalanche Energy Rating Eas

90 mJ

Temel Parça No

STP2N

Kılıf / Paket

TO-220-3

Turn Off Delay Time

22 ns

Vgs Max

±30V

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Ambalaj

Tube

Power Dissipation Max

45W Tc

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

8 Ω @ 700mA, 10V

Akım Değeri

1.4A

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Direnç

8Ohm

Turn On Delay Time

8 ns

Vgsth Max Id

4.5V @ 50μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

45W

Montaj

Through Hole

Drain To Source Breakdown Voltage

600V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

1.4A Tc

Transistor Element Material

SILICON

Continuous Drain Current Id

1.4A

Fall Time Typ

55 ns

Number Of Elements

1

Element Configuration

Single

Pin Sayısı

3