STP2N62K3

Specifications

Transistor Element Material

SILICON

Continuous Drain Current Id

2.2A

Fall Time Typ

22 ns

Number Of Elements

1

Element Configuration

Single

Pin Sayısı

3

Threshold Voltage

3.75V

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

4.4ns

Input Capacitance Ciss Max Vds

340pF @ 50V

Pulsed Drain Currentmax Idm

8.8A

Direnç

3.6Ohm

Turn On Delay Time

8 ns

Vgsth Max Id

4.5V @ 50μA

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

45W

Montaj

Through Hole

Drain To Source Breakdown Voltage

620V

Genişlik

4.6mm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Uzunluk

10.4mm

Current Continuous Drain Id25

2.2A Tc

Kılıf / Paket

TO-220-3

Turn Off Delay Time

21 ns

Vgs Max

±30V

Reach Svhc

No SVHC

Ambalaj

Tube

Power Dissipation Max

45W Tc

Rds On Max Id Vgs

3.6 Ω @ 1.1A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Additional Feature

ULTRA-LOW RESISTANCE

Kurşunsuz

Lead Free

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Radyasyon Dayanımı

No