STP28NM60ND

Specifications

Power Dissipation Max

190W Tc

Rds On Max Id Vgs

150m Ω @ 11.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Yükseklik

15.75mm

Parça Durumu

Active

Kılıf / Paket

TO-220-3

Vgs Max

±25V

Turn Off Delay Time

92 ns

Ambalaj

Tube

Pin Sayısı

3

Gate To Source Voltage Vgs

25V

Seri

FDmesh™ II

Gate Charge Qg Max Vgs

62.5nC @ 10V

Fet Type

N-Channel

Temel Parça No

STP28N

Avalanche Energy Rating Eas

50 mJ

Fabrika Tedarik Süresi

16 Weeks

Terminal Sayısı

3

Radyasyon Dayanımı

No

Rise Time

21.5ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

Pulsed Drain Currentmax Idm

92A

Input Capacitance Ciss Max Vds

2090pF @ 100V

Number Of Elements

1

Fall Time Typ

27 ns

Case Connection

DRAIN

Continuous Drain Current Id

23A

Transistor Element Material

SILICON

Weight

329.988449mg

Element Configuration

Single

Drain To Source Voltage Vdss

600V

Drain To Source Breakdown Voltage

650V

Genişlik

4.6mm

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Transistor Application

SWITCHING