STP270N4F3

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

2.9m Ω @ 80A, 10V

Power Dissipation Max

330W Tc

Montaj Tipi

Through Hole

Parça Durumu

Obsolete

Kılıf / Paket

TO-220-3

Vgs Max

±20V

Turn Off Delay Time

110 ns

Ambalaj

Tube

Pin Sayısı

3

Seri

STripFET™ III

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

150nC @ 10V

Fet Type

N-Channel

Temel Parça No

STP270

Avalanche Energy Rating Eas

1000 mJ

Terminal Sayısı

3

Radyasyon Dayanımı

No

Pin Sayısı

3

Drainsource On Resistancemax

0.0029Ohm

Rise Time

180ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

7400pF @ 25V

Pulsed Drain Currentmax Idm

480A

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Case Connection

DRAIN

Fall Time Typ

45 ns

Element Configuration

Single

Drain To Source Breakdown Voltage

40V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

120A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

22 ns