Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 25V
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
- Radyasyon Dayanımı
- No
- Power Dissipation Max
- 160W Tc
- Yükseklik
- 15.75mm
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±25V
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Genişlik
- 4.6mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Uzunluk
- 10.4mm
- Vgsth Max Id
- 5V @ 250μA
- Turn On Delay Time
- 60 ns
- Montaj
- Through Hole
- Power Dissipation
- 160W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Fall Time Typ
- 40 ns
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Seri
- FDmesh™ II
- Gate Charge Qg Max Vgs
- 80nC @ 10V
- Avalanche Energy Rating Eas
- 850 mJ
- Temel Parça No
- STP25N
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rds On Max Id Vgs
- 160m Ω @ 10.5A, 10V
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Turn Off Delay Time
- 50 ns
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 600V
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 21A Tc
- Direnç
- 160mOhm
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