STP24N60M2

Specifications

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

18A

Case Connection

DRAIN

Fall Time Typ

61 ns

Input Capacitance Ciss Max Vds

1060pF @ 100V

Pulsed Drain Currentmax Idm

72A

Rise Time

9ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Through Hole

Power Dissipation

150W

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

14 ns

Vgsth Max Id

4V @ 250μA

Direnç

190MOhm

Current Continuous Drain Id25

18A Tc

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

600V

Genişlik

4.6mm

Ambalaj

Tube

Vgs Max

±25V

Turn Off Delay Time

15 ns

Kılıf / Paket

TO-220-3

Parça Durumu

Active

Yükseklik

15.75mm

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

190m Ω @ 9A, 10V

Power Dissipation Max

150W Tc

Radyasyon Dayanımı

No

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fabrika Tedarik Süresi

16 Weeks

Avalanche Energy Rating Eas

180 mJ