STP23NM60ND

Specifications

Turn Off Delay Time

90 ns

JESD-609 Kodu

e3

Kurşunsuz

Lead Free

Rds On Max Id Vgs

180m Ω @ 10A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Obsolete

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

69nC @ 10V

Seri

FDmesh™ II

Pin Sayısı

3

Terminal Sayısı

3

Avalanche Energy Rating Eas

700 mJ

Temel Parça No

STP23N

Continuous Drain Current Id

19.5A

Element Configuration

Single

Jedec95 Code

TO-220AB

Rise Time

45ns

Pin Sayısı

3

Threshold Voltage

4V

Pulsed Drain Currentmax Idm

78A

Input Capacitance Ciss Max Vds

2100pF @ 50V

Direnç

180mOhm

Çalışma Sıcaklığı

150°C TJ

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

600V

Current Continuous Drain Id25

19.5A Tc

RoHS Durumu

ROHS3 Compliant

Vgs Max

±25V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

Reach Svhc

No SVHC

Power Dissipation Max

150W Tc

Yükseklik

15.75mm

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

25V

Fet Type

N-Channel

Transistor Element Material

SILICON

Fall Time Typ

40 ns

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)