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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Radyasyon Dayanımı
- No
- Power Dissipation Max
- 125W Tc
- Yükseklik
- 15.75mm
- Vgs Max
- ±25V
- Kılıf / Paket
- TO-220-3
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Genişlik
- 4.6mm
- Uzunluk
- 10.4mm
- Power Dissipation
- 125W
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Turn On Delay Time
- 6.6 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Fall Time Typ
- 29 ns
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 45nC @ 10V
- Seri
- MDmesh™ II
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Avalanche Energy Rating Eas
- 254 mJ
- Fabrika Tedarik Süresi
- 16 Weeks
- Temel Parça No
- STP23N
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 190m Ω @ 8.5A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 71 ns
- JESD-609 Kodu
- e3
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 500V
- Current Continuous Drain Id25
- 17A Tc
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