Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 25V
- Seri
- MDmesh™ II
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 44nC @ 10V
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Type
- N-Channel
- Terminal Sayısı
- 3
- Temel Parça No
- STP20N
- Kılıf / Paket
- TO-220-3
- Turn Off Delay Time
- 75 ns
- Vgs Max
- ±25V
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Power Dissipation Max
- 125W Tc
- Rds On Max Id Vgs
- 270m Ω @ 7.5A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Additional Feature
- AVALANCHE RATED
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Yükseklik
- 15.75mm
- Parça Durumu
- Obsolete
- Direnç
- 270mOhm
- Vgsth Max Id
- 4V @ 250μA
- Turn On Delay Time
- 15 ns
- Çalışma Sıcaklığı
- 150°C TJ
- Power Dissipation
- 160W
- Montaj
- Through Hole
- Genişlik
- 4.6mm
- Drain To Source Breakdown Voltage
- 650V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Uzunluk
- 10.4mm
- Current Continuous Drain Id25
- 15A Tc
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 15A
- Fall Time Typ
- 20 ns
- Number Of Elements
- 1
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