Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Direnç
- 250mOhm
- Turn On Delay Time
- 22 ns
- Vgsth Max Id
- 5V @ 250μA
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Power Dissipation
- 192W
- Montaj
- Through Hole
- Drain To Source Breakdown Voltage
- 500V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- RoHS Durumu
- Non-RoHS Compliant
- Jesd30 Code
- R-PSFM-T3
- Current Continuous Drain Id25
- 20A Tc
- Fall Time Typ
- 15 ns
- Continuous Drain Current Id
- 20A
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jedec95 Code
- TO-220AB
- Rise Time
- 20ns
- Voltage Rated Dc
- 500V
- Pulsed Drain Currentmax Idm
- 80A
- Input Capacitance Ciss Max Vds
- 1380pF @ 25V
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Seri
- FDmesh™
- Gate Charge Qg Max Vgs
- 53nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
- Terminal Sayısı
- 3
- Temel Parça No
- STP20N
- Avalanche Energy Rating Eas
- 700 mJ
- Fabrika Tedarik Süresi
- 16 Weeks
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±30V
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
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