Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Terminal Kaplaması
- Tin (Sn)
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±30V
- Yükseklik
- 9.15mm
- Power Dissipation Max
- 192W Tc
- Akım Değeri
- 20A
- Vgsth Max Id
- 5V @ 250μA
- Turn On Delay Time
- 24 ns
- Montaj
- Through Hole
- Power Dissipation
- 192W
- Uzunluk
- 10.4mm
- Genişlik
- 4.6mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Weight
- 4.535924g
- Number Of Elements
- 1
- Fall Time Typ
- 8.5 ns
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Temel Parça No
- STP20N
- Avalanche Energy Rating Eas
- 650 mJ
- Fabrika Tedarik Süresi
- 16 Weeks
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Seri
- MDmesh™
- Gate Charge Qg Max Vgs
- 56nC @ 10V
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 9 ns
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 250m Ω @ 10A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -65°C~150°C TJ
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