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Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 190W Tc
- Akım Değeri
- 17A
- Yükseklik
- 15.75mm
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±30V
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Gate To Source Voltage Vgs
- 30V
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Type
- N-Channel
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Radyasyon Dayanımı
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Fall Time Typ
- 15 ns
- Transistor Element Material
- SILICON
- Weight
- 4.535924g
- Genişlik
- 4.6mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Uzunluk
- 10.4mm
- Vgsth Max Id
- 4.5V @ 100μA
- Turn On Delay Time
- 28 ns
- Montaj
- Through Hole
- Power Dissipation
- 190W
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rds On Max Id Vgs
- 270m Ω @ 8.5A, 10V
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Through Hole
- Parça Durumu
- Active
- Turn Off Delay Time
- 70 ns
- JESD-609 Kodu
- e3
- Pin Sayısı
- 3
- Seri
- SuperMESH™
- Gate Charge Qg Max Vgs
- 119nC @ 10V
- Avalanche Energy Rating Eas
- 850 mJ
- Fabrika Tedarik Süresi
- 12 Weeks
- Temel Parça No
- STP20N
- Terminal Sayısı
- 3
- Threshold Voltage
- 3.75V
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