Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 6 ns
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 60W
- Montaj
- Surface Mount, Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Turn On Delay Time
- 12 ns
- Uzunluk
- 10.4mm
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Genişlik
- 4.6mm
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Vgs Max
- ±18V
- Kılıf / Paket
- TO-220-3
- Yükseklik
- 9.15mm
- Akım Değeri
- 20A
- Power Dissipation Max
- 60W Tc
- Radyasyon Dayanımı
- No
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Fet Type
- N-Channel
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 18V
- Element Configuration
- Single
- Continuous Drain Current Id
- 10A
- Input Capacitance Ciss Max Vds
- 400pF @ 25V
- Pulsed Drain Currentmax Idm
- 80A
- Jedec95 Code
- TO-220AB
- Rise Time
- 30ns
- Voltage Rated Dc
- 60V
- Pin Sayısı
- 3
- Threshold Voltage
- 3V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Direnç
- 70mOhm
- Current Continuous Drain Id25
- 20A Tc
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 60V
- JESD-609 Kodu
- e3
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