STP18NM60ND

Specifications

Drain To Source Voltage Vdss

600V

Genişlik

4.6mm

Drain To Source Breakdown Voltage

650V

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Uzunluk

10.4mm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

13A Tc

Direnç

290mOhm

Çalışma Sıcaklığı

150°C TJ

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

55 ns

Montaj

Through Hole

Power Dissipation

130W

Rise Time

15.5ns

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

52A

Input Capacitance Ciss Max Vds

1030pF @ 50V

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

13A

Fall Time Typ

18 ns

Case Connection

DRAIN

Element Configuration

Single

Pin Sayısı

3

Gate To Source Voltage Vgs

25V

Seri

FDmesh™ II

Gate Charge Qg Max Vgs

34nC @ 10V

Fet Type

N-Channel

Temel Parça No

STP18N

Avalanche Energy Rating Eas

187 mJ

Terminal Sayısı

3

Radyasyon Dayanımı

No

Power Dissipation Max

110W Tc

Rds On Max Id Vgs

290m Ω @ 6.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole