Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Terminal Sayısı
- 3
- Temel Parça No
- STP18N
- Fabrika Tedarik Süresi
- 16 Weeks
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 21.5nC @ 10V
- Gate To Source Voltage Vgs
- 25V
- Seri
- MDmesh™ II Plus
- Pin Sayısı
- 3
- Ambalaj
- Tube
- Turn Off Delay Time
- 47 ns
- Vgs Max
- ±25V
- Kılıf / Paket
- TO-220-3
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Yükseklik
- 15.75mm
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 110W Tc
- Rds On Max Id Vgs
- 280m Ω @ 6.5A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 250μA
- Turn On Delay Time
- 12 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Direnç
- 280mOhm
- Current Continuous Drain Id25
- 13A Tc
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 10.4mm
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Genişlik
- 4.6mm
- Drain To Source Voltage Vdss
- 600V
- Element Configuration
- Single
- Ds Breakdown Voltagemin
- 600V
- Fall Time Typ
- 10.6 ns
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 13A
- Transistor Element Material
- SILICON
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