Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Fall Time Typ
- 13 ns
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 5V @ 250μA
- Montaj
- Through Hole
- Power Dissipation
- 90W
- Genişlik
- 4.6mm
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Uzunluk
- 10.4mm
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±25V
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Power Dissipation Max
- 110W Tc
- Additional Feature
- ULTRA-LOW RESISTANCE
- Yükseklik
- 15.75mm
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 25V
- Terminal Kaplaması
- Matte Tin (Sn)
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 13A
- Element Configuration
- Single
- Threshold Voltage
- 4V
- Pin Sayısı
- 3
- Rise Time
- 9.5ns
- Jedec95 Code
- TO-220AB
- Input Capacitance Ciss Max Vds
- 1260pF @ 100V
- Pulsed Drain Currentmax Idm
- 52A
- Direnç
- 240MOhm
- Çalışma Sıcaklığı
- 150°C TJ
- Drain To Source Breakdown Voltage
- 550V
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 16A Tc
- Turn Off Delay Time
- 29 ns
- JESD-609 Kodu
- e3
- Rds On Max Id Vgs
- 192m Ω @ 8A, 10V
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