STP180NS04ZC

Specifications

Gate Charge Qg Max Vgs

110nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

20V

Seri

SAFeFET™

Temel Parça No

STP180

Terminal Sayısı

3

Fet Type

N-Channel

Lifecycle Status

NRND (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

Power Dissipation Max

330W Tc

Rds On Max Id Vgs

4.2m Ω @ 40A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Not For New Designs

Montaj Tipi

Through Hole

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Ambalaj

Tube

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

33V

Current Continuous Drain Id25

120A Tc

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Power Dissipation

300W

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 1mA

Rise Time

250ns

Drainsource On Resistancemax

0.0042Ohm

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Pulsed Drain Currentmax Idm

480A

Input Capacitance Ciss Max Vds

4560pF @ 25V

Number Of Elements

1

Transistor Element Material

SILICON

Continuous Drain Current Id

120A

Fall Time Typ

115 ns