Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 50 ns
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Uzunluk
- 10.4mm
- Genişlik
- 4.6mm
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 4V @ 250μA
- Turn On Delay Time
- 25 ns
- Power Dissipation
- 330W
- Montaj
- Through Hole
- Yükseklik
- 15.75mm
- Power Dissipation Max
- 330W Tc
- Reach Svhc
- No SVHC
- Ambalaj
- Tube
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 20V
- Terminal Kaplaması
- Tin (Sn)
- Radyasyon Dayanımı
- No
- Input Capacitance Ciss Max Vds
- 6800pF @ 25V
- Pulsed Drain Currentmax Idm
- 480A
- Pin Sayısı
- 3
- Threshold Voltage
- 4V
- Jedec95 Code
- TO-220AB
- Rise Time
- 150ns
- Element Configuration
- Single
- Continuous Drain Current Id
- 60A
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 120A Tc
- Drain To Source Breakdown Voltage
- 55V
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Nominal Vgs
- 4 V
- Direnç
- 3.8MOhm
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
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