Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-220-3
- Seri
- STripFET™ II
- Input Capacitance Ciss Max Vds
- 4400pF @ 25V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 120A Tc
- Power Dissipation Max
- 300W Tc
- Vgs Max
- ±20V
- Jedec95 Code
- TO-220AB
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Fall Time Typ
- 80 ns
- Turn On Delay Time
- 35 ns
- Montaj Tipi
- Through Hole
- Power Dissipation
- 300W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Avalanche Energy Rating Eas
- 850 mJ
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Direnç
- 6MOhm
- Gate Charge Qg Max Vgs
- 190nC @ 10V
- Vgsth Max Id
- 4V @ 250μA
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rds On Max Id Vgs
- 6m Ω @ 60A, 10V
- Drain To Source Breakdown Voltage
- 55V
- Transistor Application
- SWITCHING
- Rise Time
- 180ns
- Kurşunsuz
- Lead Free
- Element Configuration
- Single
- Turn Off Delay Time
- 140 ns
- Ambalaj
- Tube
- Jesd30 Code
- R-PSFM-T3
- Pulsed Drain Currentmax Idm
- 480A
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