STP13NM60ND

Specifications

Transistor Element Material

SILICON

Fall Time Typ

15.4 ns

Current Continuous Drain Id25

11A Tc

Power Dissipation Max

109W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

845pF @ 50V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Seri

FDmesh™ II

Gate To Source Voltage Vgs

25V

Montaj

Through Hole

Genişlik

4.6mm

Parça Durumu

Active

Avalanche Energy Rating Eas

162 mJ

Yükseklik

15.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Direnç

380mOhm

Gate Charge Qg Max Vgs

24.5nC @ 10V

Vgsth Max Id

5V @ 250μA

Drain To Source Voltage Vdss

600V

Turn On Delay Time

46.5 ns

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Element Configuration

Single

Turn Off Delay Time

9.6 ns

Ambalaj

Tube

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Rise Time

10ns

Rds On Max Id Vgs

380m Ω @ 5.5A, 10V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

11A

Temel Parça No

STP13N

Number Of Elements

1