Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 10.4mm
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 52A
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
- Rds On Max Id Vgs
- 550m Ω @ 4.5A, 10V
- Element Configuration
- Single
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Rise Time
- 14ns
- Yükseklik
- 9.15mm
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 4.5V @ 100μA
- Voltage Rated Dc
- 600V
- Power Dissipation
- 150W
- Gate To Source Voltage Vgs
- 30V
- Parça Durumu
- Active
- Threshold Voltage
- 3.75V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Reach Svhc
- No SVHC
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Akım Değeri
- 13A
- Vgs Max
- ±30V
- Power Dissipation Max
- 150W Tc
- Jedec95 Code
- TO-220AB
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 13A
- Temel Parça No
- STP13N
- Number Of Elements
- 1
- Drainsource On Resistancemax
- 0.55Ohm
- Drain To Source Breakdown Voltage
- 600V
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn Off Delay Time
- 61 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Avalanche Energy Rating Eas
- 400 mJ
- Gate Charge Qg Max Vgs
- 92nC @ 10V
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